Data Sheet
www.rohm.com
? 2011 ROHM Co., Ltd. All rights reserved.
Band Switching Diode
DAN235E
?Applications
?Dimensions (Unit : mm) ?Land size figure (Unit : mm)
High frequency switching
?Features
1)Ultra small mold type. (EMD3)
2)High reliability
?Construction
Silicon epitaxial
?Structure
?Taping specifications (Unit : mm)
?Absolute maximum ratings (Ta=25°C)
Parameter LimitsSymbol
Unit
Power dissipation 150Pd
mW
Reverse voltage (DC) 35VR
V
Junction temperature 125Tj °C
Tstg °C?55 to ?125
?Electrical characteristics
(Ta=25°C)
Symbol Min. Typ. Max. Unit Conditions
Forward voltage
VF
- - 1.0 V
IF=10mA
Reverse current
IR
- - 10 nA
VR=25V
Ct - - 1.2 pF
VR=6V , f=1MHz
Forward resistance rf - - 0.9
?
IF=2mA , f=100MHz
Parameter
Capacitance between terminals
Storage temperature
EMD3
1.0
0.7
0.5
0.5
0.7
0.7
0.6
0.6
1.3
ROHM : EMD3
JEITA : SC-75A
JEDEC : SOT-416
dot (year week factory)
(3)
1.6±0.2
1.6±0.2
1.0±0.1
0.8±0.1
0.5
0.5
(2)
(1)
0.15±0.05
0.7±0.1
0.55±0.1
0.1Min
0～0.1
0.2±0.1
-0.05
0.3±0.1
0.05
4.0±0.1
2.0±0.05
φ1.55±0.1φ1.5?0.1
0?0
3.5±0.05
1.75±0.1
8.0±0.2
φ0.5±0.1
1.8±0.2
0.3±0.1
1.8±0.1
5.5±0.2
0.9±0.2
0～0.1
1/3
2011.06 - Rev.C
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